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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 1/3 HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438T. Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg Tj Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t10ms) Base Current Tc=25C Total Dissipation at Ta=25C Storage Temperature Max. Operating Junction Temperature Value 45 45 45 5 4 7 1 25 1.5 -55 to 150 150 TO-126 Unit V V V V A A A W W C C Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. 5 83 C/W C/W Electrical Characteristics (Ta=25C, unless otherwise specified) Symbol ICBO ICES IEBO *VCEO(sus) *VCE(sat) *VBE *hFE fT Parameter Collector Cut-off Current (IE=0) Collector Cut-off Current (VBE=0) Emitter Cut-off Current (IC=0) Collector-Emitter Sustaining Voltage (IB=0) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency Test Conditions VCB=45V VCE=45V VEB=5V IC=100mA IC=2A, IB=0.2A IC=10mA,VCE=5V IC=2A, VCE=1V IC=10mA, VCE=5V IC=0.5A, VCE=1V IC=2A, VCE=1V IC=0.25A, VCE=1V 45 30 85 40 3 0.4 0.58 130 140 Min. Typ. Max. 100 100 1 0.6 1.2 Unit uA uA mA V V V V MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% HBD437T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 2/3 Current Gain & Collector Current 125 C o 75 C o 125 C o 75 C o o 25 C 25 C o hFE 100 hFE hFE @ VCE=1V 100 hFE @ VCE=5V 10 10 1 10 100 1000 10000 1 10 100 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB 10000 On Voltage & Collector Current VBE(on) @ VCE=1V Saturation Voltage (mV) 75 C 100 25 C o o On Voltage (mV) 75 C 1000 25 C o o 125 C 10 1 10 100 1000 10000 100 1 10 100 1000 10000 o 125 C o Collector Current IC (mA) Collector Current IC (mA) Safe Operating Area 10 Collector Current-IC (A) 1 0.1 1ms 0.01 1 100ms 1s 10 100 Forward Voltage-VCE (V) HBD437T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126 Dimension D A B 123 G C I E J K M Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 3/3 Marking: 3 Date Code H 437 T Control Code 4 Style: Pin 1.Emitter 2.Collector 3.Base F H L 1 2 3-Lead TO-126 Plastic Package HSMC Package Code: T *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBD437T HSMC Product Specification |
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